Hall pressure sensor
Hall pressure sensors are based on the Hall effect of certain semiconductor materials.The Hall effect refers to the phenomenon that when a solid conductor is placed in a magnetic field and a current passes through it, the charge carriers in the conductor are biased to one side by the Lorentz force, and then a voltage (Hall voltage) is generated.The electric force induced by the voltage balances the Lorentz force. From the polarity of the Hall voltage, it can be confirmed that the current inside the conductor is caused by the movement of negatively charged particles (free electrons).
Applying a magnetic field perpendicular to the current direction on the conductor will cause the electrons in the wire to be gathered by the Lorentz force, thereby generating an electric field in the direction of the electron gathering,This electric field will make the subsequent electrons acted by electricity to balance out the Lorentz force caused by the magnetic field, so that the subsequent electrons can pass smoothly without deviation, which is called the Hall effect.The resulting built-in voltage is called the Hall voltage.
When the magnetic field is an alternating magnetic field, the Hall electromotive force is also an alternating electromotive force of the same frequency, and the time for establishing the Hall electromotive force is extremely short, so the response frequency is high. The material of the ideal Hall element requires high resistivity and carrier mobility in order to obtain a large Hall electromotive force. The materials used for Hall elements are mostly semiconductors, including N-type silicon (Si), indium antimonide (InSb), indium arsenide (InAs), germanium (Ge), gallium arsenide (GaAs) and multilayer semiconductor structure materials, N The Hall coefficient, temperature stability and linearity of silicon-type silicon are all good, and the temperature drift of gallium arsenide is small, and it is widely used at present.
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